transistor features z low collector-emitter saturation voltage v ce(sat) z large peak collector current i c maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -30 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -7 v i c collector current -continuous -4 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -7 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-7v,i c =0 -0.1 a dc current gain h fe v ce =-2v,i c =-2a 120 315 collector-emitter saturation voltage v ce(sat) i c =-3a,i b =-100ma -1 v transition frequency f t v ce =-6v,i c =-50ma,f=200mhz 120 mhz collector output capacitance c ob v cb =-20v,i e =0,f=1mhz 40 pf classification of h fe rank q r range 120-205 180-315 marking iq ir 2sb1 07 3 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics 2sb1 07 3 2 date:2011/05 www.htsemi.com semiconductor jinyu
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